国家/地区 中国（100） 世界知识产权组织（4） 韩国（2） 美国（2）
IPC部 C（102） B（12） H（7）
IPC大类 C01（102） B82（8） C08（7）
H01（7） C23（6） C09（4）
B22（3） B32（2）
IPC小类 C01B（102） B82Y（8） C23C（6）
H01M（5） C08G（4） B22F（3）
C08J（3） C08K（3） C08L（3）
B32B（2） C09K（2） H01B（2）
H01G（2）
IPC C01B031/04（102）
发明人 LI Z（102）
公开年 2015（51） 2014（15） 2016（15） 2013（13） 2012（5） 2011（2）
申请年 2014（52）  2015（14）  2013（13）  2012（11）  2016（8）  2011（3） 
专利权人 CHINESE ACAD.（38） CHONGQING MO.（38） CHONGQING GR.（19） CHONGQING IN.（8）
JIANGSU JIAN.（8） ZHEJIANG TAN.（3） ZHEJIANG TAN.（3） HEILONGJIANG.（2）
HEILONGJIANG.（2） LI Z（2） MCNAIR NEW P.（2） NAT CENT NAN.（2）
UNIV CHINA G.（2） UNIV HENAN（2） UNIV JIANGNA.（2） UNIV QINGDAO.（2）
UNIV WUHAN（2）

Use of crop waste in preparing graphene hollow carbon nano-cage material, and graphene hollow carbon nano-cage material is useful in preparing super capacitor.

LI D, LI Z, LIANG Q, LIU S, XU X

Manufacture of graphene oxide-modified graphene composite anode material involves mixing graphene oxide, nano-silicon and solvent, adding asphalt-based nano-porous carbon material and sodium hydroxide, activating, drying and cooling.

LI Z

Carrier for controlling growth of graphene nuclei, has box enclosing wall around contour, where upper edge of cover is fitted with box around peripheral wall of fitting.

GAO X, JIANG H, LI Z, SHI H

Preparation of doped graphene or graphene derivative for fuel cell catalyst, by mixing nitrogen containing organic molecule, boron containing organic molecule, and phosphorus containing organic molecule.

JIANG L, WANG S, ZENG R, WANG L, LI Z

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G

Preparation of sulfur-doped graphene or its derivatives used as anode material for e.g. sensor, involves mixing solution containing graphene or its derivatives with sulfur-containing acid, freeze-drying, calcining and cooling.

CAO H, LI M, LI Z, LIU C, ZHANG Y

Template-free one-step method for preparing graphite-type nitrogen-doped graphene tube in high proportion, used in vacuum microelectronic devices, involves immersing graphite substrate in ethanol solution and introducing methane gas.

LI K, LI Z, MENG A, ZHANG M, SONG G, ZHENJIANG L, GUANYING S, ALAN M, MENG Z, KAIHUA L

Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing, cooling metal substrate to room temperature, coating layer of carbon solution on metal substrate, and solidifying solution.

GAO X, JIANG H, LI Z, SHI H

Graphene multilayer stacking transfer method involves taking transfer target substrate, coating with elastic transparent coating, forming target substrate/elastic transparent coating, and carrying out rolling method.

GAO X, JIANG H, LI C, LI Z, MA J, SHI H, XU X

Graphene transfer device comprises feeding unit, pressing unit, power bubbling prevention unit, water flushing unit, drying unit and winding unit, where pressing unit is provided with driving pressing roller.

GAO X, JIANG H, LI C, LI Z, MA J, SHI H, XU X